相关论文: Controllable valley and spin transports in ferroma…

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

We investigate electron transport through a mixed-valence molecular complex in which an excess electron can tunnel between hetero-valent transition metal ions, each having a fixed localized spin. We show that in this class of molecules the…

Motivated by experimental reports on chirality induced spin selectivity, we investigate a minimal model that allows us to calculate the charge and spin conductances through helical molecules analytically. The spin-orbit interaction is…

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities,…

The connection between molecular vibrations and spin polarization in charge transport through molecular junctions is currently a topic of high interest, with important consequences for a variety of phenomena, such as chirality-induced spin…

We study theoretically the effect of spin relaxation on the spin transport in a ferromagnet/superconductor(FM/SC) tunnel junction. When spin-polarized electrons are injected into the SC from the FM, nonequilibrium spin accumulation as well…

A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…

Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical…

We discuss the possibility to generate, manipulate, and probe single spins in single-level quantum dots coupled to ferromagnetic leads. The spin-polarized currents flowing between dot and leads lead to a non-equilibrium spin accumulation,…

Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation…

Silicene has introduced itself as an outstanding novel material, which seeks its meritorious place among common spintronic devices like Cu and Ag. In this work, photogalvanic effect in silicene is studied within the semi-classical approach…

The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by…

We propose a new type of spin-valley locking (SVL), named $\textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin…

Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…

A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual…

We study transport properties and also local density of states in a clean superconductor-normal metal-superconductor Josephson junction with triplet f-wave superconductors based on the Eilenberger equation. Effects of thickness of normal…

Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line…

Analogous to charge and spin, electrons in solids endows an additional degree of freedom: the valley pseudospin. Two-dimensional hexagonal materials such as graphene exhibit two valleys, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$.…

The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including NMR, quantum communication, and quantum computation. Valley polarization, associated with the occupancy of degenerate, but…

Using wave function matching approach and employing the Landauer-Buttiker formula a ferromagnetic graphene junction with a temperature gradient across the system, is studied. We calculate the thermally induced charge and spin current as…