相关论文: Integration of the Ferromagnetic Insulator EuO ont…

We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO…

Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized…

We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…

Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been…

The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum of graphene by inducing an energy gap in it and making it…

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena, which can be further used for applications in next generation spintronic devices. Of particular interest is to…

The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms,…

Imprinting magnetism into graphene makes an important step to its applications in spintronics. An actively explored approach is proximity coupling of graphene to a 2D magnet. In these endeavors, the use of epitaxial graphene may bring…

Magnetic gates in close proximity to graphene can induce ferromagnetic correlations. We study the effect of such induced magnetization dependent Zeeman splittings on the graphene transport properties. We estimate that induced spin…

We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium…

It is by now well established that high-quality graphene enables a gate-tunable low-loss plasmonic platform for the efficient confinement, enhancement, and manipulation of optical fields spanning a broad range of frequencies, from the mid…

A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of…

Ferromagnetism and electrical insulation are often at odds, signifying an inherent trade off. The simultaneous optimization of both in one material, essential for advancing spintronics and topological electronics, necessitates the…

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…

The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both…

Research on graphene has revealed its unique optical properties, including strong coupling with light, high-speed operation, and gate-variable optical conductivity, which promise to satisfy the needs of future electro-optic (EO) modulators.…

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that…

Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering…

We propose and demonstrate that a EuO-induced and top-gated graphene ferromagnetic junction can be simultaneously operated as a spin filter as well as a spin valve. We attribute such a remarkable result to a coexistence of a half-metal band…

The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…