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相关论文: Homogeneous switching in ultrathin ferroelectric B…

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We present molecular dynamics simulations of a realistic model of an ultrathin film of BaTiO$_3$ sandwiched between short-circuited electrodes to determine and understand effects of film thickness, epitaxial strain and the nature of…

材料科学 · 物理学 2009-11-13 Jaita Paul , Takeshi Nishimatsu , Y. Kawazoe , Umesh V. Waghmare

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate…

材料科学 · 物理学 2020-04-15 Changqing Guo , Guohua Dong , Ziyao Zhou , Ming Liu , Houbing Huang , Jiawang Hong , Xueyun Wang

Interface effects on the ferroelectric behavior of PbTiO$_3$ ultrathin films deposited on SrTiO$_3$ substrate are investigated using an interatomic potential approach with parameters fitted to first-principles calculations. We find that the…

材料科学 · 物理学 2009-11-11 M Sepliarsky , M. G. Stachiotti , R. L. Migoni

We study the ferroelectric stability and surface structural properties of an oxygen-terminated hexagonal YMnO$_3$ ultra-thin film using density functional theory. Under an open circuit boundary condition, the ferroelectric state with the…

材料科学 · 物理学 2009-04-14 Na Sai , Craig J. Fennie , Alexander A. Demkov

Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the…

We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a…

The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic…

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…

材料科学 · 物理学 2025-12-17 Jiaheng Li , Quansheng Wu , Hongming Weng

We present the first analytical study of phase transitions in ferroelastic-ferroelectric epitaxial thin films on exactly solvable model. The emerging domain structure with domains of equal width (which may be exponentially large on a "soft"…

统计力学 · 物理学 2009-10-31 A. M. Bratkovsky , A. P. Levanyuk

Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin…

We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…

Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial…

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show…

介观与纳米尺度物理 · 物理学 2012-01-10 N. C. Bristowe , Massimiliano Stengel , P. B. Littlewood , J. M. Pruneda , Emilio Artacho

To investigate the scope of ferroelectric behavior in La-substituted BiFeO3 films, LaxBi1-xFeO3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO3(001) and DyScO3(110) substrates with a SrRuO3 bottom electrode layer. A…

We discuss ferroelectric phase transitions into single- and multidomain states in very thin films using continuous theory. It is shown that in nearly cubic ferroelectrics the domain state may survive down to atomic film thicknesses, unlike…

材料科学 · 物理学 2007-05-23 A. M. Bratkovsky , A. P. Levanyuk

Ferroelectric films usually have phase states and physical properties very different from those of bulk ferroelectrics. Here we propose free-standing ferroelectric-elastic multilayers as a bridge between these two material systems. Using a…

材料科学 · 物理学 2011-10-18 S. Prokhorenko , N. A. Pertsev

A first-principles-derived approach is developed to study the effects of uncompensated depolarizing electric fields on the properties of Pb(Zr,Ti)O$_3$ ultrathin films for different mechanical boundary conditions. A rich variety of…

材料科学 · 物理学 2009-11-10 Igor Kornev , Huaxiang Fu , L. Bellaiche

Bulk LiOsO3 was experimentally identified as a "ferroelectric" metal where polar distortions coexist with metallicity [Shi et al., Nature Materials 12, 1024 (2013)]. It is generally believed that polar displacements in a "ferroelectric"…

计算物理 · 物理学 2019-06-12 Jinlian Lu , Gong Chen , Wei Luo , Jorge Íñiguez , Laurent Bellaiche , Hongjun Xiang

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric…

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