中文
相关论文

相关论文: Photoconductivity of biased graphene

200 篇论文

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the…

We examine the photoconductivity of an intrinsic graphene associated with far- and mid-infrared irradiation at low temperatures. The model under consideration accounts for the excitation of the electron-hole pairs by incident radiation, the…

材料科学 · 物理学 2008-05-27 F. T. Vasko V. Ryzhii

While the thermoelectric and photoconduction effects are crucial in pristine and low-doped graphene, the bolometric effect is known to dominate the photoresponse in biased graphene. Here, we present a detailed microscopic investigation of…

介观与纳米尺度物理 · 物理学 2019-01-30 Roland Jago , Ermin Malic , Florian Wendler

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at…

介观与纳米尺度物理 · 物理学 2011-08-18 Dong Sun , Grant Aivazian , Aaron M. Jones , Wang Yao , David Cobden , Xiaodong Xu

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains…

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric…

We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on…

应用物理 · 物理学 2020-08-27 Jacek Gosciniak , Jacob B. Khurgin

We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on…

应用物理 · 物理学 2020-02-12 Jacek Gosciniak , Jacob B. Khurgin

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very…

介观与纳米尺度物理 · 物理学 2011-11-29 Justin C. W. Song , Mark S. Rudner , Charles M. Marcus , Leonid S. Levitov

Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in…

We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by…

介观与纳米尺度物理 · 物理学 2015-05-13 Xiaodong Xu , Nathaniel M. Gabor , Jonathan S. Alden , Arend van der Zande , Paul L. McEuen

Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated…

介观与纳米尺度物理 · 物理学 2018-09-07 Kei Kinoshita , Rai Moriya , Miho Arai , Satoru Masubuchi , Kenji Watanabe , Takashi Taniguchi , Tomoki Machida

Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of…

介观与纳米尺度物理 · 物理学 2020-02-26 Michael S. Fuhrer , Nikhil V. Medhekar

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap…

We present a framework to calculate the anisotropic and non-linear photoconductivity for two band systems with application to graphene. In contrast to the usual perturbative (second order in the optical field strength) techniques, we…

介观与纳米尺度物理 · 物理学 2018-01-10 Ashutosh Singh , Saikat Ghosh , Amit Agarwal

The photoresponse of graphene has recently received considerable attention. The main mechanisms yielding a finite dc response to an oscillating radiation field which have been investigated include responses of photovoltaic,…

介观与纳米尺度物理 · 物理学 2013-12-06 Andrea Tomadin , Marco Polini

We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the…

材料科学 · 物理学 2011-10-18 Maxim Trushin , John Schliemann

This paper is devoted to photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction. We study linear response to monochromatic light with excitation energy well below the semiconductor band gap. The operation…

介观与纳米尺度物理 · 物理学 2018-05-31 Maxim Trushin

Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an…

介观与纳米尺度物理 · 物理学 2015-04-24 K. J. Tielrooij , M. Massicotte , L. Piatkowski , A. Woessner , Q. Ma , P. Jarillo-Herrero , N. F. van Hulst , F. H. L. Koppens

DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These…

介观与纳米尺度物理 · 物理学 2016-08-17 F. Hipolito , Thomas G. Pedersen , Vitor M. Pereira
‹ 上一页 1 2 3 10 下一页 ›