相关论文: Atomic layer deposition and superconducting proper…

We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(100) using in-situ high resolution ion scattering and high resolution transmission electron microscopy. We show the transition…

Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic…

Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors.…

V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the…

Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating…

Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 {\deg}C. The multilayers were then annealed inside a separate vacuum furnace at 950 {\deg}C for 3h. The…

Lithium niobate-on-insulator (LNOI) is an emerging photonic platform with high potential for scalable quantum information processing due to its strong second-order nonlinearity. However, little progress has been made in developing on-chip…

We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher…

Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…

We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm.…

We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100…

NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active…

We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…

The role of stoichiometry and growth temperature in the preferential nucleation of material phases in the Li-Nb-O family are explored yielding an empirical growth phase diagram. It is shown that while single parameter variation often…

Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and…

Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system…

Flexible NbC nanocomposite thin films with carbon content ranging from 0 to 99 at.% were deposited at room temperature on Si (100) and polystyrene substrates by non-reactive magnetron sputtering from pure Nb and C targets without applying…

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding…

We report the first evidence of the formation of niobium hydrides within niobium films on silicon substrates in superconducting qubits fabricated at Rigetti Computing. We combine complementary techniques including room and cryogenic…

The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…