相关论文: Possibility of exchange switching ferromagnet - an…
Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
The electron-electron correlations in a many-electron (Ne = 1, 2,..., 5) quantum dot confined by a parabolic potential is investigated in the presence of a single magnetic ion and a perpendicular magnetic field. We obtained the energy…
Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase with $d$-wave order which has been experimentally realized recently. We discuss theoretical models of altermagnet based systems on lattice and in continuum. We show…
This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between the ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction…
Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic…
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects.…
Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel…
We consider mechanism of exchange coupling based on interaction between electrons in nonmagnetic layer. Depending on ratio of inverse time of diffusion of electrons between ferromagnetic layers and ferromagnetic splitting of conducting…
We show that a Josephson current flowing through a ferromagnet-normal-metal-ferromagnet trilayer connected to two superconducting electrodes induces an equilibrium exchange interaction between the magnetic moments of the ferromagnetic…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…