相关论文: Epitaxial integration of the intrinsic ferromagnet…
This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic…
Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been…
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have…
GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical…
Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization…
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine…
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the…
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and…
Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can…
Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important…
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…
A newly identified class of magnetic materials called altermagnets has attracted much attention due to the practical properties of spin-splitting bands akin to ferromagnets and small compensated magnetization akin to antiferromagnets. These…
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by…
Among rare-earth nitrides (RENs), gadolinium nitride (GdN) stands out as a promising material for spintronics owing to its distinctive combination of semiconducting behavior, strong exchange interactions, and intrinsically soft…
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…
Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of…
Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…
Extensive studies on the impact of bismuth incorporation into the (Ga,Mn)As prototype dilute ferromagnetic semiconductor (DFS) on its structural, magnetic and magnetotransport properties are summarized in this review. Thin epitaxial layers…
GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in-situ during epitaxy. From the electronic valence…
We report effect of Gd inclusion in the NbN superconductor thin films. The films are deposited on single crystalline Silicon (100) by DC reactive sputtering technique i.e., deposition of Nb and Gd in presence of reactive N2 gas. The…