相关论文: Out-of-equilibrium singlet-triplet Kondo effect in…
We have used the electromigration technique to fabricate a $\rm{C_{{60}}}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in…
We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low…
We study a small spin-degenerate quantum dot with even number of electrons, weakly connected by point contacts to the metallic electrodes, and subject to an external magnetic field. If the Zeeman energy B is equal to the single-particle…
We demonstrate that in a single molecule magnet (SMM) strongly coupled to electrodes the Kondo effect involves all magnetic excitations. This Kondo effect is induced by the quantum tunneling of the magnetic moment (QTM). Importantly, the…
Kondo conduction has been observed in a quantum dot with an even number of electrons at the Triplet-Singlet degeneracy point produced by applying a small magnetic field $B$ orthogonal to the dot plane. At a much larger field $ B \sim B_*$,…
The joint effect of the electron-phonon interaction and Kondo effect on the nonequilibrium transport through the single molecule transistor is investigated by using the improved canonical transformation scheme and extended equation of…
We consider transport through a single-molecule magnet strongly coupled to metallic electrodes. We demonstrate that for half-integer spin of the molecule electron- and spin-tunneling \emph{cooperate} to produce both quantum tunneling of the…
We investigate the enhancement of the Kondo effect in quantum dots with an even number of electrons, using a scaling method and a mean field theory. We evaluate the Kondo temperature $T_K$ as a function of the energy difference between…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We analyze universal transport properties of a strongly interacting quantum dot in the Kondo regime when the quantum dot is placed in an external magnetic field. The quantum dot is described by the asymmetric Anderson model with the spin…
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…
We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd…
We analyze here a model for single-electron charging in semiconductor quantum dots that includes the standard Anderson on-site repulsion (U) as well as the spin-exchange ($J_d$) that is inherently present among the electrons occupying the…
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
We present a careful and thorough microscopic derivation of the Kondo Hamiltonian for single-molecule magnets (SMMs) transistors. When the molecule is strongly coupled to metallic leads, we show that by applying a transverse magnetic field…
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…
We investigate a lateral semiconductor quantum dot with a large number of electrons in the limit of strong coupling to the leads. A Kondo effect is observed and can be tuned in a perpendicular magnetic field. This Kondo effect does not…
We study peculiarities of transport through a Coulomb blockade system tuned to the vicinity of the spin transition in its ground state. Such transitions can be induced in practice by application of a magnetic field. Tunneling of electrons…
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…