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相关论文: Tunnel barrier enhanced voltage signals generated …

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We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two…

介观与纳米尺度物理 · 物理学 2009-11-13 Yaroslav Tserkovnyak , T. Moriyama , John Q. Xiao

We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F (F-ferromagnet; I-insulator; N-normal-metal) multilayers of nanoscale thickness attached to two normal metal…

介观与纳米尺度物理 · 物理学 2009-04-16 Son-Hsien Chen , Ching-Ray Chang , John Q. Xiao , Branislav K. Nikolic

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $\mathit{n-}$GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a…

We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…

介观与纳米尺度物理 · 物理学 2013-09-02 Mircea Trif , Yaroslav Tserkovnyak

Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier.…

材料科学 · 物理学 2015-05-19 Wei Chen , Dao N. H. Nam , Jiwei Lu , Stuart A. Wolf

A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated…

介观与纳米尺度物理 · 物理学 2007-05-23 Xuhui Wang , Gerrit E. W. Bauer , Bart J. van Wees , Arne Brataas , Yaroslav Tserkovnyak

We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (R.F.) magnetic field. The D. C. voltage across the junction is calculated and is found not to decrease despite…

材料科学 · 物理学 2009-11-13 S. T. Chui , Z. F. Lin

We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The…

介观与纳米尺度物理 · 物理学 2009-11-13 M. V. Costache , S. M. Watts , C. H. van der Wal , B. J. van Wees

We study the magnetization dynamics in ferromagnet$\mid$insulator$\mid$ferromagnet and ferromagnet$\mid$insulator$\mid$normal metal ultra-small tunnel junctions, and the associated voltage drop in the presence of an electromagnetic…

介观与纳米尺度物理 · 物理学 2014-11-25 Mircea Trif , Pascal Simon

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…

介观与纳米尺度物理 · 物理学 2009-11-10 Alireza Saffarzadeh

Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…

The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…

介观与纳米尺度物理 · 物理学 2024-11-01 Jakub Pawlak , Witold Skowroński , Piotr Kuświk , Félix Casanova , Marek Przybylski

Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…

材料科学 · 物理学 2009-11-26 M. Ye. Zhuravlev , Y. Wang , S. Maekawa , E. Y. Tsymbal

Josephson tunnel junctions with the strong ferromagnetic alloy $\Fe_{0.75}\Co_{0.25}$ as the barrier material were studied. The junctions were prepared with high quality down to a thickness range of a few monolayers of Fe-Co. An oscillation…

超导电性 · 物理学 2009-05-07 D. Sprungmann , K. Westerholt , H. Zabel , M. Weides , H. Kohlstedt

The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side…

介观与纳米尺度物理 · 物理学 2008-01-23 Xi Chen , Qing-Rong Zheng , Gang Su

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…

材料科学 · 物理学 2015-05-13 Hyunsoo Yang , See-Hun Yang , Stuart Parkin

We present a theoretical analysis of current driven ferromagnetic resonance in a ferromagnet/normal-metal/ferromagnet tri-layer. This method of driving ferromagnetic resonance was recently realized experimentally by Tulapurkar et al.…

介观与纳米尺度物理 · 物理学 2007-05-23 Joern N. Kupferschmidt , Shaffique Adam , Piet W. Brouwer

DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…

介观与纳米尺度物理 · 物理学 2017-04-05 Linqiang Luo , Mehdi Kabir , Nam Dao , Salinporn Kittiwatanakul , Michael Cyberey , Stuart A. Wolf , Mircea Stan , Jiwei Lu

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with…

材料科学 · 物理学 2015-05-14 K. Mizunuma , S. Ikeda , J. H. Park , H. Yamamoto , H. Gan , K. Miura , H. Hasegawa , J. Hayakawa , F. Matsukura , H. Ohno
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