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相关论文: Quantum interference in bilayer graphene

200 篇论文

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…

介观与纳米尺度物理 · 物理学 2010-10-12 Guangyu Xu , Carlos M. Torres , Emil B. Song , Jianshi Tang , Jingwei Bai , Xiangfeng Duan , Yuegang Zhang , Kang L. Wang

The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Misumi , K. Shizuya

We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies…

Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…

介观与纳米尺度物理 · 物理学 2015-05-14 Simon Branchaud , Alicia Kam , Piotr Zawadzki , Francois M. Peeters , Andrew S. Sachrajda

The DC conductivity of monolayer and bilayer graphene is studied perturbatively for different types of disorder. In the case of monolayer, an exact cancellation of logarithmic divergences occurs for all disorder types. The total…

无序系统与神经网络 · 物理学 2011-12-05 Andreas Sinner , Klaus Ziegler

The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…

无序系统与神经网络 · 物理学 2018-07-11 G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , B. N. Zvonkov

Optical Hall conductivity, as directly related to Faraday rotation, is theoretically studied for bilayer and trilayer graphene. In bilayer graphene, the trigonal warping of the band dispersion greatly affects the resonance structures in…

介观与纳米尺度物理 · 物理学 2012-10-17 Takahiro Morimoto , Mikito Koshino , Hideo Aoki

The quantum behavior of electrons in bilayer graphene with applied magnetic fields is addressed. By using second-order supersymmetric quantum mechanics the problem is transformed into two intertwined one dimensional stationary Schr\"odinger…

数学物理 · 物理学 2020-10-28 David J Fernández C , Juan D García M , Daniel O-Campa

The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details…

The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the…

介观与纳米尺度物理 · 物理学 2017-07-17 P. Cadden-Zimansky , M. Shinn , G. T. Myers , Y. Chu , M. J. Dalrymple , H. C. Travaglini

In this chapter, semi-analytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons, are presented. Since electron-hole puddles are experimental facts in all graphene samples,…

介观与纳米尺度物理 · 物理学 2016-09-07 George S. Kliros

We demonstrate that hexagonal graphene nanoflakes with zigzag edges display quantum interference (QI) patterns analogous to benzene molecular junctions. In contrast with graphene sheets, these nanoflakes also host magnetism. The cooperative…

强关联电子 · 物理学 2019-02-26 Angelo Valli , Adriano Amaricci , Valentina Brosco , Massimo Capone

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the…

介观与纳米尺度物理 · 物理学 2018-02-14 Tarik P. Cysne , Jose H. Garcia , Alexandre R. Rocha , Tatiana G. Rappoport

We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic…

介观与纳米尺度物理 · 物理学 2015-05-27 B. Jouault , B. Jabakhanji , N. Camara , W. Desrat , C. Consejo , J. Camassel

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness,…

介观与纳米尺度物理 · 物理学 2009-11-13 Eduardo R. Mucciolo , Antonio H. Castro Neto , Caio H. Lewenkopf

Bilayer graphene cavities where electrons are confined within finite graphene flakes provide an alluring platform not only for the future nanoelectronic devices owing to the tunable energy gap but also for investigating the quantum nature…

介观与纳米尺度物理 · 物理学 2026-01-05 Jucheng Lin , Yicheng Zhuang , Anton M. Graf , Joonas Keski-Rahkonen , Eric J. Heller

We present a review of the electronic compressibility of monolayer and bilayer graphene. We focus on describing theoretical calculations of the effects of electron--electron interactions and various types of disorder, and also give a…

介观与纳米尺度物理 · 物理学 2015-06-04 D. S. L. Abergel

Magic-angle twisted bilayer graphene is a tunable material with remarkably flat energy bands near the Fermi level, leading to fascinating transport properties and correlated states at low temperatures. However, grown pristine samples of…

介观与纳米尺度物理 · 物理学 2024-03-29 Aleksander Sanjuan Ciepielewski , Jakub Tworzydło , Timo Hyart , Alexander Lau

Interlayer coupling in rotationally faulted graphene multilayers breaks the local sublattice-symmetry of the individual layers. Earlier we have presented a theory of this mechanism, which reduces to an effective Dirac model with…

介观与纳米尺度物理 · 物理学 2015-06-04 M. Kindermann , P. N. First

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo