相关论文: Graphene Spin Transistor

The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…

The paper presents the author view on spin-rooted properties of graphene supported by numerous experimental and calculation evidences. Dirac fermions of crystalline graphene and local spins of graphene molecules are suggested to meet a…

We find clear signatures of spin-dependent negative differential resistance in compound systems comprising a graphene nanoribbon and a set of ferromagnetic insulator strips deposited on top of it. The periodic array of ferromagnetic strips…

We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…

The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…

A proposal to detect the purported canted antiferromagnet order for the $\nu=0$ quantum Hall state of graphene based on a two-terminal spin transport setup is theoretically discussed. In the presence of a magnetic field normal to the…

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

Graphene was the first material predicted to be a time-reversal-invariant topological insulator; however, the insulating gap is immeasurably small owing to the weakness of spin-orbit interactions in graphene. A recent experiment [1]…

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density…

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…

Graphene is a very promising material in spintronics due to both its high electric mobility and low intrinsic spin-obit coupling. Electronic spins can be injected from a ferromagnetic material through a tunnel contact into graphene owing to…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and…

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 \mu m in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$…

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…

A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo)…

An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution…