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We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…

材料科学 · 物理学 2009-11-13 D. M. Basko

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra…

介观与纳米尺度物理 · 物理学 2014-12-17 Valentin N. Popov , Philippe Lambin

We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical…

介观与纳米尺度物理 · 物理学 2015-05-30 Rahul Rao , Derek Tishler , Jyoti Katoch , Masa Ishigami

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…

The paper reports a theoretical study of scattering of electrons by edges in graphene and its effect on Raman scattering. First, effective models are discussed for translationally invariant and rough edges. Second, they are used in a…

材料科学 · 物理学 2009-05-28 D. M. Basko

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

介观与纳米尺度物理 · 物理学 2015-05-14 K. M. Borysenko , J. T. Mullen , E. A. Barry , S. Paul , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

Inelastic (Raman) light scattering intensities for a 42-electron quantum dot under off-resonance conditions and in different spin and angular momentum channels are computed in order to test whether final collective states become the…

介观与纳米尺度物理 · 物理学 2009-11-10 Augusto Gonzalez , Alain Delgado

Raman spectroscopy of graphene is reviewed from a theoretical perspective. After an introduction of the building blocks (electronic band structure, phonon dispersion, electron-phonon interaction, electron-light coupling), Raman intensities…

介观与纳米尺度物理 · 物理学 2017-03-23 Sven Reichardt , Ludger Wirtz

We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will…

介观与纳米尺度物理 · 物理学 2018-02-14 C. Faugeras , M. Orlita , M. Potemski

We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the…

介观与纳米尺度物理 · 物理学 2015-05-14 C. Faugeras , P. Kossacki , D. M. Basko , M. Amado , M. Sprinkle , C. Berger , W. A. de Heer , M. Potemski

Raman scattering on phonon--plasmon coupled modes in high magnetic fields is considered theoretically. The calculations of the dielectric function were performed in the long-wave approximation for the semiclassical and ultra-quantum…

材料科学 · 物理学 2007-05-23 L. A. Falkovsky

We study inelastic energy relaxation in graphene for low energies to find out how electrons scatter with acoustic phonons and other electrons. By coupling the graphene to superconductors, we create a strong dependence of the measured…

介观与纳米尺度物理 · 物理学 2015-05-27 Juha Voutilainen , Aurelien Fay , Pasi Häkkinen , Janne K. Viljas , Tero T. Heikkilä , Pertti J. Hakonen

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…

介观与纳米尺度物理 · 物理学 2015-03-19 Duhee Yoon , Young-Woo Son , Hyeonsik Cheong

A consistent calculation of resonant inelastic (Raman) scattering amplitudes for relatively large quantum dots, which takes account of valence-band mixing, discrete character of the spectrum in intermediate and final states, and…

介观与纳米尺度物理 · 物理学 2009-11-10 Alain Delgado , Augusto Gonzalez

Electron-phonon interaction is of central importance for the electrical and heat transport properties of metals, and is directly responsible for charge-density-waves or (conventional) superconducting instabilities. The direct observation of…

超导电性 · 物理学 2022-02-02 S. M. Souliou , A. Bosak , G. Garbarino , M. Le Tacon

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo

We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies,…

介观与纳米尺度物理 · 物理学 2015-05-19 F. Alzina , H. Tao , J. Moser , Y. Garcia , A. Bachtold , C. M. Sotomayor-Torres

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the…

材料科学 · 物理学 2015-05-13 D. M. Basko , S. Piscanec , A. C. Ferrari

Ultrafast wavepacket dynamics of electron-phonon-photon systems is studied by numerical calculations. When nonadiabaticity of electron-phonon systems is taken into account, Raman scattering process plays an important role in the dynamics of…

介观与纳米尺度物理 · 物理学 2019-06-26 Kunio Ishida

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with…

材料科学 · 物理学 2022-01-27 Zherui Han , Xiaolong Yang , Sean E. Sullivan , Tianli Feng , Li Shi , Wu Li , Xiulin Ruan
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