相关论文: Donor type semiconductor at low temperature as mas…
Long nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 \AA, length 0.1 - 1 mm) were prepared. Electrical conduction of these nanowires is studied over a temperature range 1.5 - 350 K. It is found that…
It has been pointed out in ref.[1] that in the nuMSM (Standard Model extended by three right-handed neutrinos with masses smaller than the electroweak scale), there is a corner in the parameter space where CP-violating resonant oscillations…
It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which…
Relativistic temperature electrons higher than 0.5 MeV are generated typically with laser intensities of about 10$^{18}$ W/cm$^{2}$. Their generation with high repetition rate lasers that operate at non-relativistic intensities…
Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce…
We examine the possibility of high temperature superconductivity from two-dimensional semiconductor without antiferromagnetic fluctuations. The weak coupling BCS theory is applied, especially where the Fermi level is near the bottom of the…
We propose a characterization of zero temperature phases in disordered superconductors on the basis of the nature of quasiparticle transport. In three dimensional systems, there are two distinct phases in close analogy to the distinction…
Geometrical and physical properties of dusty tori of Seyfert nuclei probed by the water vapor maser emission at 22 GHz are discussed. We assume that the dusty torus has a simple cylindrical form and the maser emission can be detected only…
In this paper, dedicated to the career of Tom Erber, we consider the Casimir interaction between weakly coupled bodies at nonzero temperature. For the case of semitransparent bodies, that is, ones described by delta-function potentials, we…
Electrons in operating microelectronic semiconductor devices are accelerated by locally varying strong electric field to acquire effective electron temperatures nonuniformly distributing in nanoscales and largely exceeding the temperature…
The low energy excitation spectrum is found for a layered superconductor vortex with a small number of impurities inside the vortex core. All levels are found to be correlated. This leads to the strong enhancement of conductivity in…
The influence has been studied of the ionization laser polarization on the effective temperature of an ultracold electron source, which is based on near-threshold photoionization. This source is capable of producing both high-intensity and…
We have studied the electronic properties and optical absorption spectra of three different cases of donor centers, D^{0}, D^{-} and D^{2-}, which are subjected to a perpendicular magnetic field, using the exact diagonalization method. The…
For the coherently driven \Lambda-type three-level systems the general ready-to-calculate expression for the susceptibility tensor at the frequency of the weak probe field is obtained for the arbitrary polarization of the strong coupling…
An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the…
We investigate evolution of the intracluster medium (ICM), considering the relaxation process between the ions and electrons. According to the standard scenario of structure formation, ICM is heated by the shock in the accretion flow to the…
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using…
IsoDAR provides a pure and intense $\bar \nu_e$ source with an average energy of 6.5 MeV produced through $^8$Li $\beta$-decay. This source can be paired with a large scintillator detector, such as KamLAND, to produce a sample of $\bar…
In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A…
A new Sesame-type table for the electrical conductivity of aluminum is described. The table is based on density functional theory calculations and ranges from 0.001 to 1 times solid density (2.7 g/cm^3 ), and from 0.01 to 1000 eV in…