中文

混合Al/Cu/Al单电子晶体管中准粒子密度的消失

超导电性 2012-01-23 v3

摘要

基于超导铝的许多纳米电子器件所能达到的保真度受到残余非平衡准粒子密度nqpn_{qp}或能隙中准粒子态密度(由Dynes参数γ\gamma表征)的限制。我们从Al/AlOx/Cu单电子晶体管的输运测量中推断出nqp<0.033 μm3n_{qp} < 0.033 \ \mu m^{-3}γ<1.6×107\gamma < 1.6 \times 10^{-7}的上限,将先前的结果提高了一个数量级。由于高效的微波屏蔽和准粒子弛豫,超导引线中的典型准粒子数为零。

关键词

引用

@article{arxiv.1106.1326,
  title  = {Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor},
  author = {O. -P. Saira and A. Kemppinen and V. F. Maisi and J. P. Pekola},
  journal= {arXiv preprint arXiv:1106.1326},
  year   = {2012}
}

备注

5 pages, 3 figures; updated to revised version that was accepted for publication, contains data from a reference sample without qp traps