太赫兹光谱探测MoSe$_2$中的超快光电流
介观与纳米尺度物理
2020-12-22 v3 光学
摘要
我们利用太赫兹（THz）发射光谱研究典型二维半导体、过渡金属硫族化物MoSe中的飞秒光电流动力学。我们识别出在双层（BL）和多层（ML）样品中，响应于超短（fs）光学激发产生THz辐射的几种不同机制。在ML中，THz辐射由面外电流在皮秒时间尺度上产生，源于光激发载流子在表面电场中的漂移。BL发射由面内位移电流产生。最后，我们在BL样品的发射中观测到约THz的振荡。我们将该振荡归因于两个激子态之间能量间隔为meV的量子拍频。
引用
@article{arxiv.2008.12203,
title = {Ultrafast photocurrents in MoSe$_2$ probed by terahertz spectroscopy},
author = {Denis Yagodkin and Lukas Nadvornik and Oliver Gueckstock and Cornelius Gahl and Tobias Kampfrath and Kirill I. Bolotin},
journal= {arXiv preprint arXiv:2008.12203},
year = {2020}
}
备注
This is the Accepted Manuscript version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/abd527 7 pages, 9 figures