Tunable X-band optoelectronic oscillators based on external-cavity semiconductor lasers
Abstract
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-to-electrical conversion. We achieve a timing jitter of ps and a quality factor of across the entire X-band, that ranges from 6.79 GHz to 11.48 GHz. Tuning is achieved by varying the injection current .
Cite
@article{arxiv.1709.06812,
title = {Tunable X-band optoelectronic oscillators based on external-cavity semiconductor lasers},
author = {C. Y. Chang and Michael J. Wishon and Daeyoung Choi and Junliang Dong and K. Merghem and Abderrahim Ramdane and Francois Lelarge and A. Martinez and A. Locquet and D. S. Citrin},
journal= {arXiv preprint arXiv:1709.06812},
year = {2017}
}