Realization of a semiconductor-based cavity soliton laser
Optics
2009-11-13 v1
Abstract
The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase-insensitive and hence expected to be robust for all-optical processing applications. The motility of these structures is also demonstrated.
Cite
@article{arxiv.0709.2575,
title = {Realization of a semiconductor-based cavity soliton laser},
author = {Y. Tanguy and T. Ackemann and W. J. Firth and R. Jaeger},
journal= {arXiv preprint arXiv:0709.2575},
year = {2009}
}