Topological random alloy
摘要
Topological phases of matter are often realized in crystalline materials. To extend their understanding beyond perfect stoichiometry, we introduce a minimal model of a topological random binary alloy and show that the system realizes an exotic form of impurity-band engineering. We reveal that, in contrast to Wannier charge centers pinned by impurities in conventional semiconductors, doping a proximate quantum anomalous Hall insulator results in dopant-centric chiral current loops. The nature of such current loops is intrinsically tied to the properties of both the host and the dopant. We demonstrate that, even at dilute dopant density, these current loops can form topological domains in an otherwise trivial host and trigger a topological phase transition. On the other hand, doping a topological host having chirality opposite to that of the dopants can unexpectedly stabilize a metallic phase in which bulk transport is mediated by inter-domain edge modes.
引用
@article{arxiv.2606.30917,
title = {Topological random alloy},
author = {Subrata Pachhal and Aziz Hasan and Adhip Agarwala},
journal= {arXiv preprint arXiv:2606.30917},
year = {2026}
}
备注
6+8 pages, 4+14 figures