Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer
量子物理
2007-05-23 v1
摘要
The scheme for measurement of the state of a single spin (or a few spin system) based on the single-electron turnstile and injection of spin polarized electrons from magnetic metal contacts is proposed. Applications to the recent proposal concerning the spin gates based on a silicon matrix (B.Kane, Nature, {\bf 393}, 133 (1998)) are discussed.
引用
@article{arxiv.quant-ph/9906106,
title = {Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer},
author = {S. N. Molotkov and S. S. Nazin},
journal= {arXiv preprint arXiv:quant-ph/9906106},
year = {2007}
}
备注
6 pages, 2 figures