Mn$_{1-x}$Fe$_x$Si单晶的电阻率：量子临界行为的证据
强关联电子
2009-08-04 v1
摘要
对MnFeSi单晶在2至300K温度范围内、 = 0、0.05、0.08、0.12和0.15组分下进行了电阻率测量。发现Fe掺杂使磁有序温度从 = 0时的30K降至 = 0.15时的2K以下。尽管Fe掺杂导致低温剩余电阻率大幅增加，但磁转变以上电阻率的温度依赖性几乎不受Fe含量增加的影响。对电阻率温度导数的分析提供了有力证据，表明在 = 0.15附近存在非费米液体基态，从而存在由Fe含量调控的量子临界点。
引用
@article{arxiv.0908.0294,
title = {Resistivity of Mn$_{1-x}$Fe$_x$Si single crystals: Evidence for quantum critical behavior},
author = {C. Meingast and Q. Zhang and Th. Wolf and F. Hardy and K. Grube and W. Knafo and P. Adelmann and P. Schweiss and H. v. Lohneysen},
journal= {arXiv preprint arXiv:0908.0294},
year = {2009}
}
备注
9 pages, 4 figures, Proceedings of the NATO Advanced Research Workshop on Properties and Application of Thermoelectric Materials, Hvar, Croatia, 21-26 September 2008