Quantum dot dephasing by edge states
介观与纳米尺度物理
2009-10-31 v1
摘要
We calculate the dephasing rate of an electron state in a pinched quantum dot, due to Coulomb interactions between the electron in the dot and electrons in a nearby voltage biased ballistic nanostructure. The dephasing is caused by nonequilibrium time fluctuations of the electron density in the nanostructure, which create random electric fields in the dot. As a result, the electron level in the dot fluctuates in time, and the coherent part of the resonant transmission through the dot is suppressed.
引用
@article{arxiv.cond-mat/9907055,
title = {Quantum dot dephasing by edge states},
author = {Y. Levinson},
journal= {arXiv preprint arXiv:cond-mat/9907055},
year = {2009}
}