The proposal of quantum lithography [Boto et al., Phys. Rev. Lett. 85, 2733 (2000)] is studied via a rigorous formalism. It is shown that, contrary to Boto et al.'s heuristic claim, the multiphoton absorption rate of a ``NOON'' quantum state is actually lower than that of a classical state with otherwise identical parameters. The proof-of-concept experiment of quantum lithography [D'Angelo et al., Phys. Rev. Lett. 87, 013602 (2001)] is also analyzed in terms of the proposed formalism, and the experiment is shown to have a reduced multiphoton absorption rate in order to emulate quantum lithography accurately. Finally, quantum lithography by the use of a jointly Gaussian quantum state of light is investigated, in order to illustrate the trade-off between resolution enhancement and multiphoton absorption rate.
@article{arxiv.quant-ph/0607114,
title = {On the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography},
author = {Mankei Tsang},
journal= {arXiv preprint arXiv:quant-ph/0607114},
year = {2007}
}
Comments
14 pages, 7 figures, submitted, v2: rewritten in response to referees' comments, v3: rewritten and extended, v4: accepted by Physical Review A