Non-adiabatic geometrical quantum gates in semiconductor quantum dots
量子物理
2009-11-10 v1 凝聚态物理
摘要
In this paper we study the implementation of non-adiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding/manipulation schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be in principle implemented
引用
@article{arxiv.quant-ph/0301089,
title = {Non-adiabatic geometrical quantum gates in semiconductor quantum dots},
author = {Paolo Solinas and Paolo Zanardi and Nino Zangh\`ı and Fausto Rossi},
journal= {arXiv preprint arXiv:quant-ph/0301089},
year = {2009}
}
备注
5 Pages LaTeX, 10 Figures included