III-V 铁磁半导体中的电流诱导自旋力矩
高能物理 - 唯象学
2008-02-27 v1
摘要
我们阐述了非均匀 III-V 铁磁半导体中电流诱导自旋力矩的理论。载流子自旋-3/2 和导致自旋不守恒的强自旋-轨道相互作用，引入了与铁磁金属中自旋力矩显著的概念差异。我们确定了弱动量散射区域中电场下的自旋密度，证明了对磁化的力矩与在自旋-轨道相互作用和铁磁性特有的交换场共同作用下的自旋进动密切相关。由电场激发的自旋极化小于铁磁金属中的情况，并且由于缺乏角动量守恒，无法以简单的闭合矢量形式表示。值得注意的是，标量散射和自旋相关散射均不影响该结果。我们利用我们的结果估算了电流驱动畴壁的速度。
引用
@article{arxiv.0802.3715,
title = {New Physics at the LHC: A Les Houches Report. Physics at Tev Colliders 2007 -- New Physics Working Group},
author = {G. Brooijmans and A. Delgado and B. A. Dobrescu and C. Grojean and M. Narain and J. Alwall and G. Azuelos and K. Black and E. Boos and T. Bose and V. Bunichev and R. S. Chivukula and R. Contino and A. Djouadi and L. Dudko and J. Ferland and Y. Gershtein and M. Gigg and S. Gonzalez de la Hoz and M. Herquet and J. Hirn and G. Landsberg and K. Lane and E. Maina and L. March and A. Martin and X. Miao and G. Moreau and M. M. Nojiri and A. Pukhov and P. Ribeiro and P. Richardson and E. Ros and R. Rosenfeld and J. Santiago and V. Sanz and H. J. Schreiber and G. Servant and A. Sherstnev and E. H. Simmons and R. K. Singh and P. Skands and S. Su and T. M. P. Tait and M. Takeuchi and M. Vos and D. G. E. Walker},
journal= {arXiv preprint arXiv:0802.3715},
year = {2008}
}
备注
127 pages