Ionic Ordering in Thiospinel CuIr$_{2}$S$_{4}$

T. Furubayashi; T. Matsumoto; S. Nagata

Ionic Ordering in Thiospinel CuIr$_{2}$S$_{4}$

强关联电子 2007-05-23 v1 材料科学

作者: T. Furubayashi , T. Matsumoto , S. Nagata

摘要

Crystal structure of spinel compound CuIr $_{2}$ S $_{4}$ was examined by powder X-ray diffraction for the insulating phase below the metal-insulator transition at $T_{MI}$ = 230 K. The superstructure spots are reproduced by considering the displacement of Ir atoms. A model for the ionic ordering of Ir $^{4+}$ and Ir $^{3+}$ with the same number is proposed for the insulating phase on the basis of the structural analysis. The model suggests that the structural change at $T_{MI}$ is driven by the formation Ir $^{4+}$ dimers. In addition, we found that the superstructure spots becomes significantly weak below 60 K, without any significant effects on electric and magnetic properties. Possible mechanism for the transition is discussed.

关键词

phase transitions frustrated magnetism radiation damage in silicon

引用

@article{arxiv.cond-mat/0203427,
  title  = {Ionic Ordering in Thiospinel CuIr$_{2}$S$_{4}$},
  author = {T. Furubayashi and T. Matsumoto and S. Nagata},
  journal= {arXiv preprint arXiv:cond-mat/0203427},
  year   = {2007}
}

备注

10 pages, 4 figures, submitted to J. Phys. Soc. Japan

相关论文

查看更多相关论文 →