High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser
Abstract
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (SiN) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency-selective Vernier mirrors on the SiN chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.
Cite
@article{arxiv.2012.07533,
title = {High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser},
author = {Jesse Mak and Albert van Rees and Rob E. M. Lammerink and Dimitri Geskus and Youwen Fan and Peter J. M. van der Slot and Chris G. H. Roeloffzen and Klaus-J. Boller},
journal= {arXiv preprint arXiv:2012.07533},
year = {2021}
}