Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance
Mesoscale and Nanoscale Physics
2007-05-23 v1 Strongly Correlated Electrons
Abstract
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
Keywords
Cite
@article{arxiv.cond-mat/0508500,
title = {Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance},
author = {Yasuhiro Utsumi and Dmitri S. Golubev and Gerd Schön},
journal= {arXiv preprint arXiv:cond-mat/0508500},
year = {2007}
}
Comments
4 pages, 1 figure