Excitonic lasing in semiconductor quantum wires
材料科学
2007-05-23 v1
摘要
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
引用
@article{arxiv.cond-mat/9912009,
title = {Excitonic lasing in semiconductor quantum wires},
author = {L. Sirigu and D. Y. Oberli and L. Degiorgi and A. Rudra and E. Kapon},
journal= {arXiv preprint arXiv:cond-mat/9912009},
year = {2007}
}
备注
11 pages, 4 figures, submitted to Phys. Rev. B