Error-resistant Single Qubit Gates with Trapped Ions
量子物理
2011-12-23 v1
摘要
Coherent operations constitutive for the implementation of single and multi-qubit quantum gates with trapped ions are demonstrated that are robust against variations in experimental parameters and intrinsically indeterministic system parameters. In particular, pulses developed using optimal control theory are demonstrated for the first time with trapped ions. Their performance as a function of error parameters is systematically investigated and compared to composite pulses.
引用
@article{arxiv.quant-ph/0612106,
title = {Error-resistant Single Qubit Gates with Trapped Ions},
author = {N. Timoney and V. Elman and W. Neuhauser and Chr. Wunderlich},
journal= {arXiv preprint arXiv:quant-ph/0612106},
year = {2011}
}
备注
5 pages 5 figures