中文

Electronic structure and magnetism in slightly doped SrB_6

材料科学 2009-11-07 v1

摘要

Spin-polarized band calculations for supercells of SrB6_{6}, where a La-, In- or Al- impurity or a vacancy is replacing one Sr, are performed within the local spin density approximation. Moderately large cells with 8 formula units (56 atoms) are studied for all dopings and large ones with 27 formula units (189 atoms) for the case of La-doping. The undoped system has a vanishing density-of-states (DOS) at the Fermi energy (EF_F), while the additional La-d band makes EF_F to enter the bands above the gap. An Al (or In) impurity has the opposite effect, with a rigid-band like shift of E_F to below the gap. In the former case, the addition of a d-electron makes a local, impurity-like modification of the electronic structure close to the La atom. As has been shown in a previous publication, it can lead to a weak ferromagnetic state. This result is shown to persist at even lower doping, by the 189-atom cell calculations, with a moment of the order 0.1 μB\mu_B per La impurity. An addition of a p-electron, by an In-impurity, makes no similar effect. The magnetic state can be understood from a charge transfer and an additional gain in potential energy, as a spin-splitting is imposed. Different models with modified localization of the La-band are made in order to show the correlation between charge transfer and the size of the magnetic moment.

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引用

@article{arxiv.cond-mat/0103180,
  title  = {Electronic structure and magnetism in slightly doped SrB_6},
  author = {T. Jarlborg},
  journal= {arXiv preprint arXiv:cond-mat/0103180},
  year   = {2009}
}

备注

8 pages, 2 figures