Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process
量子物理
2009-11-13 v2
摘要
We investigate the quantum Zeno and anti-Zeno effects for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno effect to quantum anti-Zeno effect can happen as the magnetic flux and the gate voltage were adjusted.
引用
@article{arxiv.quant-ph/0603152,
title = {Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process},
author = {Lan Zhou and F. M. Hu and Jing Lu and C. P. Sun},
journal= {arXiv preprint arXiv:quant-ph/0603152},
year = {2009}
}
备注
6 pages, 5 figures