We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPC.
@article{arxiv.1003.0995,
title = {Doped graphene as tunable electron-phonon coupling material},
author = {Claudio Attaccalite and Ludger Wirtz and Michele Lazzeri and Francesco Mauri and Angel Rubio},
journal= {arXiv preprint arXiv:1003.0995},
year = {2011}
}
Comments
accepted for publication in NanoLetters (DOI: 10.1021/nl9034626)