Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.
@article{arxiv.2208.04048,
title = {Current-driven writing process in antiferromagnetic Mn2Au for memory applications},
author = {Sonka Reimers and Yaryna Lytvynenko and Yuran Niu and Evangelos Golias and Brice Sarpi and Larissa Ishibe-Veiga and Thibauld Denneulin and Andras Kovacs and Rafal Dunin-Borkowski and Jonathan Bläßer and Mathias Kläui and Martin Jourdan},
journal= {arXiv preprint arXiv:2208.04048},
year = {2023}
}