Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits.
@article{arxiv.2212.12369,
title = {A compact and versatile cryogenic probe station for quantum device testing},
author = {Mathieu de Kruijf and Simon Geyer and Toni Berger and Matthias Mergenthaler and Floris Braakman and Richard J. Warburton and Andreas V. Kuhlmann},
journal= {arXiv preprint arXiv:2212.12369},
year = {2023}
}