Related papers: Electrically addressing a single self-assembled qu…
We study the electronic coupling between two vertically stacked InAs quantum dots, which are embedded in the center of a n-i-n structure. We use a micro-photoluminescence setup to optically isolate a single quantum dot pair and measure the…
We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…
The many-particle ground state and excitations of self-assembled InAs quantum dots are investigated using far-infrared (FIR) and capacitance spectroscopy. The contributions of quantization and charging energies to the $n$--electron energy…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…
We experimentally demonstrate that the interaction between plasma and nanometer-sized semiconductor quantum dots (QDs) is directly connected to a change in their photoluminescence (PL) spectrum. This is done by taking in-situ, high…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we…
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a…
We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection…
The reliable detection of single quantum particles has revolutionized the field of quantum optics and quantum information processing. For several years, researchers have aspired to extend such detection possibilities to larger scale…
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The…
Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the…
The self-assembled quantum dot with lens domain has rotational symmetry but it is intrinsically asymmetric when the electron moves perpendicularly to its circular base, {\it i. e.} along the rotational axis. To characterize this asymmetry,…
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…