Related papers: Electrically addressing a single self-assembled qu…
Ultracold atoms in optical lattices are a versatile tool to investigate fundamental properties of quantum many body systems. In particular, the high degree of control of experimental parameters has allowed the study of many interesting…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…
We have fabricated and studied the photoluminescence from microdisks containing single, selected self-assembled quantum dots. Using two electron beam lithography exposures and a two-step selective wet etching process, the dots were…
We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and…
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500…
We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of…
Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present…
We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another,…
We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly…
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…
We report on the dynamic nuclear polarization of a single charge-tunable self-assembled InAs/GaAs quantum dot in a longitudinal magnetic field of $\sim$0.2T. The hyperfine interaction between the optically oriented electron and nuclei spins…
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow…
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling…