Related papers: The microtubule transistor
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental…
Hexagonal [0001] nonpassivated ZnO nanowires are studied with density functional calculations. The band gap and Young's modulus in nanowires which are larger than those in bulk ZnO increase along with the decrease of the radius of…
We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped…
We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…
Magnetotransport through cylindrical topological insulator (TI) nanowires is governed by the interplay between quantum confinement and geometric (Aharonov-Bohm and Berry) phases. Here, we argue that the much broader class of TI nanowires…
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the…
Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
In a recent article, A. Chen et al. claimed that they have switched (rotated by ~90 degrees) the magnetization of the soft layer of a magnetic tunnel junction (MTJ) in a non-volatile way with volatile strain by exploiting dipole interaction…
Electron transport within nanostructures can be important to varied engineering applications, such as thermoelectrics and nanoelectronics. In theoretical studies, electron Monte Carlo simulations are widely used as an alternative approach…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
The concept of mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET thanks to particle Monte Carlo device simulation. Without the introduction of specific scattering phenomenon for short channel devices, the…
The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we…
Generating high-fidelity, tunable entanglement between qubits is crucial for realizing gate-based quantum computation. In superconducting circuits, tunable interactions are often implemented using flux-tunable qubits or coupling elements,…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…