Related papers: Excitons with anisotropic effective mass
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…
Excitons, namely neutral excitations in a system of electrons arising from the electron-hole interaction, are often essential to explain optical measurements in materials. They are governed by the Bethe-Salpeter equation, which can be cast…
The binding energies of the excited states of positronium are calculated using the two body Dirac equations of constraint formalism. The results from nonperturbative evaluation are compared to those from perturbative evaluation. The…
We study theoretically the neutral and charged excitons in two-dimensional semiconductors with anisotropic dispersion of charge carriers. Such a situation is realized in CrSBr-based van der Waals heterostructures. We calculate the binding…
We employ dynamical density-matrix renormalization group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is…
The exciton binding energy, the energy required to dissociate an excited electron-hole pair into free charge carriers, is one of the key factors to the optoelectronic performance of organic materials. However, it remains unclear whether…
The study of anyons in topologically ordered quantum systems has mainly relied on edge-state interferometry. However, realizing controlled braiding of anyons necessitates the ability to detect and manipulate individual anyons within the…
Exciton condensation in semiconductors and semimetals has long been predicted but remains elusive. In a semiconductor, condensation occurs when the exciton binding energy matches the band gap. This binding energy results from a balance…
Quantum size effects for an exciton attached to a spherical quantum dot are calculated by a variational approach. The band line-ups are assumed to be type-II with finite offsets. The dependence of the exciton binding energy upon the dot…
A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and…
The energy band structure of excitons is studied in periodic potentials produced by the short-range interaction between the exciton and electrons of Wigner or Moir\'{e} lattices. Treating the exciton as a point-like dipole that interacts…
We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined…
A theory of the spin exciton capture by a magnetic impurity in a 2D electron gas is developed. We consider the resonance model for electron scattering by a transition metal impurity and calculate the binding potential for spin excitons.…
We re-examine the results of A. Thilagam [Phys. Rev. B 55, 7804 (1997)], who calculated the ratio of the binding energies of the two dimensional exciton complexes. We point out that, for charged biexciton complexes, this calculation is…
By combining an atomistic pseudopotential method with the configuration interaction approach, we predict the pressure dependence of the binding energies of neutral and charged excitons: $X^0$ (neutral monoexciton), $X^{-}$ and $X^{+}$…
We present a calculation of exciton states in semiconductor coupled quantum wells (CQWs) in the presence of electric and magnetic fields applied perpendicular to the QW plane. The exciton Schr\"odinger equation is solved in real space in…
The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only…
We propose a new method for calculating total energies of systems of interacting electrons, which requires little more computational resources than standard density-functional theories. The total energy is calculated within the framework of…
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic…
The wave function and binding energy for shallow donors in GaAs are calculated within the tight binding (TB) approach, for supercells containing up to two million atoms. The resulting solutions, coupled with a scaling law, allow…