Anyon-trions in atomically thin semiconductor heterostructures
Abstract
The study of anyons in topologically ordered quantum systems has mainly relied on edge-state interferometry. However, realizing controlled braiding of anyons necessitates the ability to detect and manipulate individual anyons within the bulk. Here, we propose and theoretically investigate a first step toward this goal by demonstrating that a long-lived, optically generated interlayer exciton can bind to a quasihole in a fractional quantum Hall state, forming a composite excitation we term an anyon-trion. Using exact diagonalization, we show that mobile anyon-trions possess a binding energy of approximately 0.5 meV, whereas static anyon-trions exhibit a binding energy of about 0.9 meV, that is linearly proportional to the quasiholes fractional charge. An experimental realization based on photoluminescence from localized interlayer excitons in a quantum twisting microscope setup should allow for a direct optical observation of anyon-trions.
Cite
@article{arxiv.2507.08933,
title = {Anyon-trions in atomically thin semiconductor heterostructures},
author = {Nader Mostaan and Nathan Goldman and Ataç İmamoğlu and Fabian Grusdt},
journal= {arXiv preprint arXiv:2507.08933},
year = {2026}
}