Related papers: Electron-based crystalline undulator
A surprising small dechanneling length was observed at (111) channeling of ultrarelativistic electrons in a 60 $\mu$m thick silicon single crystal with a bending radius of 0.15 m. The experiments were conducted at beam energies between 3.35…
In this study, we present a comprehensive quantitative analysis of the radiation emitted by 855 MeV electrons propagating through an oriented diamond hetero-crystal. The crystal consists of two distinct segments: (i) a straight…
This paper is devoted to a detailed analysis of the new type of the undulator radiation generated by an ultra-relativistic charged particle channeling along a crystal plane, which is periodically bent by a transverse acoustic wave, as well…
In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal…
Simulations of electron and positron channelling in a crystalline undulator with a small amplitude and a short period (A Kostyuk, Phys. Rev. Lett. 110 (2013) 115503) were repeated by V G Bezchastnov, A V Korol and A V Solov'yov (J. Phys. B:…
We suggest a new type of the undulator radiation which is generated by an ultra-relativistic particle channeled along a periodically bent crystallographic plane or axis. The electromagnetic radiation arises mainly due to the bending of the…
We investigate, both analytically and numerically, the influence of the dechanneling process on the parameters of undulator radiation generated by ultra-relativistic positron channelling along a crystal plane, which is periodically bent.…
A 4-period diamond undulator with a thickness of 20 $\mu$m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with an effective thickness of 165.5 $\mu$m. A planar (110)…
The usage of a Crystalline Undulator (CU) has been identified as a promising solution for generating powerful and monochromatic $\gamma$-rays. A CU was fabricated at SSL through the grooving method, i.e., by the manufacturing of a series of…
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly…
In this paper we present a novel scheme for the controlled generation of of tunable narrowband gamma-ray radiation by ultra-relativistic positron beams inside acoustically driven periodically bent crystals. A novel acoustic crystalline…
A series of Silicon crystal undulator samples were produced based on the approach presented in PRL 90 (2003) 034801, with the periods of undulation from 0.1 mm to 1 mm, and the number of periods on the order of 10. The samples were…
A crystalline undulator (CU) with periodically deformed crystallographic planes is capable of deflecting charged particles with the same strength as an equivalent magnetic field of 1000 T and could provide quite a short period L in the…
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package…
The set of frequencies and angular properties of radiation emitted from a solid-state crystalline undulator based on the channeling effect are considered. High-frequency and low-frequency branches of the undulator radiation and the angular…
We present an idea for creation of a crystalline undulator and report its first realization. One face of a silicon crystal was given periodic micro-scratches (trenches) by means of a diamond blade. The X-ray tests of the crystal deformation…
We investigate the stability of crystalline undulator radiation (CUR) peaks emitted by 530 MeV positron channelling in periodically bent C(110) crystals with varying bending amplitudes and bending periods. Relativistic molecular dynamics…
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer…
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the \MBNExplorer software package. The results of simulations for a broad range of bending radii are analyzed in terms…
A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First…