Radiation Emission by Electrons Channeling in Bent Silicon Crystals

R G Polozkov; V K Ivanov; G B Sushko; Andrey V Korol; Andrey V Solov'yov

Radiation Emission by Electrons Channeling in Bent Silicon Crystals

Accelerator Physics 2014-03-25 v1

Authors: R G Polozkov , V K Ivanov , G B Sushko , Andrey V Korol , Andrey V Solov'yov

Abstract

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

Keywords

electron channeling radiation emission bent silicon crystal numerical simulation MBN Explorer

Cite

@article{arxiv.1403.6040,
  title  = {Radiation Emission by Electrons Channeling in Bent Silicon Crystals},
  author = {R G Polozkov and V K Ivanov and G B Sushko and Andrey V Korol and Andrey V Solov'yov},
  journal= {arXiv preprint arXiv:1403.6040},
  year   = {2014}
}

Comments

9 pages, 7 figures; submitted to European Physical Journal D. arXiv admin note: text overlap with arXiv:1307.6787

Related papers

View all related →