Related papers: Type inversion in irradiated silicon: a half truth
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with…
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the…
Signal loss is the main limitation on tracking/vertexing performance due to radiation damage effect to hybrid pixel detectors when irradiated at fluences expected at High Luminosity LHC (HL-LHC). It is important to have reliable predictions…
Transverse electron focusing in two-dimensional electron gases (2DEGs) with strong spin-orbit coupling is revisited. The transverse focusing is related to the transmission between two contacts at the edge of a 2DEG when a perpendicular…
Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence, detectors with fast…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
Inter pixel capacitance (IPC) is a deterministic electronic coupling resulting in a portion of signal incident on one pixel of a hybridized detector array being measured in adjacent pixels. Data collected by light sensitive HgCdTe arrays…
We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing…
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…
Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical…
We use a string of confined $^{40}$Ca$^+$ ions to measure perturbations to a trapping potential which are caused by light-induced charging of an anti-reflection coated window and of insulating patches on the ion-trap electrodes. The…
The oscillating magnetic field produced by unbalanced currents in radio-frequency ion traps induces transition frequency shifts and sideband transitions that can be harmful to precision spectroscopy experiments. Here, we describe a…
Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge…