Related papers: Characterization of a high-power tapered semicondu…
A modified Coherent 899-21 titanium sapphire laser is injection locked to produce 6-6.5 W of single-frequency light at 852 nm. After closed-loop amplitude control and frequency stabilization to a high-finesse cavity, it delivers 4-4.5 W…
Amplifiers are ubiquitous in electronics and play a fundamental role in a wide range of scientific measurements. From a user's perspective, an ideal amplifier has very low noise, operates over a broad frequency range, and has a high dynamic…
We show by detailed numerical modeling that stimulated thermal Rayleigh scattering can account for the modal instability observed in high power fiber amplifiers. Our model illustrates how the instability threshold power can be maximized by…
We demonstrate an all-fiber spatiotemporal mode-locked laser based on graded-index multimode fiber. Due to the high damage threshold of graded-index multimode fiber devices, the output single-pulse energy reach up to 11.67 nJ. The beam…
Monolayer semiconductor transferred on nanopillar arrays provides site-controlled, on-chip single photon emission, which is a scalable light source platform for quantum technologies. However, the brightness of these emitters reported to…
A laserwire transverse electron beam size measurement system has been developed and operated at the Accelerator Test Facility 2 (ATF2) at KEK. Special electron beam optics were developed to create an approximately 1 x 100 {\mu}m (vertical x…
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a hysteresis behavior in the vicinity of…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
An ultrafast fiber chirped-pulse amplification laser system based on coherent combination of 16 ytterbium-doped rod-type amplifiers is presented. It generates 10 mJ pulse energy at 1 kW average power and 120 fs pulse duration. A partially…
A new scheme of a highly efficient hybrid laser cavity is proposed and experimentally demonstrated utilizing a hot cesium (Cs) vapor cell as an optical gain medium. The laser cavity consists of a macroscopic concave reflecting mirror (>99%…
We present nonlinear pulse compression of a high-power SESAM-modelocked thin-disk laser (TDL) using an Ar-filled hypocycloid-core Kagome Hollow-Core Photonic Crystal Fiber (HC-PCF). The output of the modelocked Yb:YAG TDL with 127 W average…
We present a coherently combined laser amplifier with 16 channels from a multicore fiber in a proof-of-principle demonstration. Filled aperture beam splitting and combination together with temporal phasing is realized in a compact and…
A source of ultrashort pulses of light in the 2 {\mu}m region was constructed using supercontinuum broadening from an erbium mode-locked laser. The output spectrum spanned 1000 nm to 2200 nm with an average power of 250 mW. A pulse width of…
Raman fiber lasers (RFLs) are currently promising and versatile light sources for a variety of applications. So far, operations of high power and brightness-enhanced RFLs have absorbed enormous interests along with rapid progress.…
Robust laser delivery and stabilization are key components in atom-based quantum technologies, such as quantum computing. Moving these technologies towards product-like deployment requires scalable, compact, cost-effective, and upgradable…
In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed…
An analytical model is proposed to determine the expressions of the semiconductor optical gain coefficient by using the special functions. These expressions differ from the standard numerical calculations approaches and they involve sums of…
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal…
Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity of 1300 W/mK. However, many fundamental properties of BAs remain unexplored experimentally. Here, for the first time, we report the…
We report on the design and characterization of a high-power amplifier with an output power of 36.5 dBm for a frequency range of 50 MHz to 1000 MHz with a total gain of 40 dB. The amplifier is optimized for driving acousto-optic and…