Related papers: Characterization of a high-power tapered semicondu…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
We propose sub-harmonic resonant optical excitation with femtosecond lasers as a new method for the characterization of phononic and nanomechanical systems in the gigahertz to terahertz frequency range. This method is applied for the…
The performance of adaptive optics systems employing sodium laser guide stars can be improved by continuously monitoring the vertical density structure of mesospheric sodium along the line of sight. We demonstrate that sodium density…
We describe new results from the semiconductor-laser tracking frequency gauge, an instrument that can perform sub-picometer distance measurements and has applications in gravity research and in space-based astronomical instruments proposed…
We present and characterize a laser system for the spectroscopy on highly-charged ^209Bi^82+ ions at a wavelength of 243.87 nm. For absolute frequency stabilization, the laser system is locked to a near-infra-red laser stabilized to a…
High-power ultrafast laser sources in the short-wave infrared region are of great interest for numerous applications, including secondary sources of radiation and processing of materials commonly opaque in the near-infrared region. In this…
In this study, we revealed the impact of the pumping scheme, fiber length, pumping power, and reflectivity of the output fiber Bragg grating on the performance of a Tm^3+ -doped fiber laser (TDFL) operating at a wavelength of 1.72 \mu m.…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
We demonstrate a novel, robust and compact fiber laser mode-locked by nonlinear polarization evolution (NPE) in polarization-maintaining (PM) fibers. The reflectivity of the artificial saturable absorber (SA) is analyzed to explain the…
A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and…
Four-wave mixing can be used to generate coherent output beams, with frequencies difficult to acquire in commercial lasers. Here a single narrow ECDL locked to the two photon 5s-5d transition in rubidium is combined with a tapered amplifier…
In this paper we present a simple while comprehensive analytical design procedure for distributed amplifiers. Distributed amplifiers are attractive for designers due to their wideband capability. When designing a distributed amplifier, the…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
This article describes a high-power and narrow-linewidth laser source at 399 nm useful for cooling and trapping of ytterbium atoms. A continuous-wave titanium-sapphire laser at 798 nm is frequency doubled using a lithium triborate crystal…
We report on a passively mode-locked Tm, Ho:CLNGG laser operating at 2090 nm, pumped by a multimode fiber-coupled 793 nm laser diode, representing the first demonstration of an affordable diode-pumped sub-100-fs mode-locked laser in the…
We demonstrate a 1 GHz prismless femtosecond Ti:sapphire ring laser which emits 890 mW for 7.6W of pump power over a continuum extending from 585 to 1200 nm at -20 dB below the maximum. A broadband continuum is obtained without careful…
We propose a new type of waveguide optical amplifier. The device consists of collinearly propagating pump and amplified Stokes beams with periodic imaging of the Stokes beam due to the Talbot effect. The application of this device as an…
We present detailed studies of the effect of polarization on thermal-induced mode instability (MI) in ytterbium-doped fiber amplifiers. Based on a steady-state theoretical model, which takes both electric fields along the two principal axes…
The single-pulse spectrum of self-amplified spontaneous emission (SASE) free electron lasers (FELs) is characterized by random fluctuations in frequency. The typical spectrum bandwidth for a hard x-ray FEL is in the range of 10-20 eV and is…
We discuss our recent progress in iimproving the phase noise of a semiconductor laser using self-injection locking of to a mode of a high-Q whispering gallery mode resonator. Locking efficiency is analyzed for semiconductor distributed…