Experimental study of the delayed threshold phenomenon in a semiconductor laser
Optics
2015-06-03 v2
Abstract
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a hysteresis behavior in the vicinity of the threshold. The temporal width of this hysteresis is measured as a function of the modulation frequency, and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
Cite
@article{arxiv.1201.3988,
title = {Experimental study of the delayed threshold phenomenon in a semiconductor laser},
author = {Abdelkrim El Amili and Grégory Gredat and Mehdi Alouini and Isabelle Sagnes and Fabien Bretenaker},
journal= {arXiv preprint arXiv:1201.3988},
year = {2015}
}