Related papers: Characterization of a high-power tapered semicondu…
We study the degree of second-order coherence of the emission of a high-power multi-quantum well superluminescent diode with a lateral tapered amplifier section with and without feedback. When operated in an external cavity, the degree of…
We report the development of a tunable, low-noise, all-fiber, single-frequency, linearly polarized high-power master oscillator power amplifier operating over 20 nm, from 1017 nm down to 997 nm. Using Ytterbium highly-doped silica fiber…
We present here a semiconductor injection laser operating in continuous wave with an emission covering more than one octave in frequency, and displaying homogeneous power distribution among the lasing modes. The gain medium is based on a…
Semiconductor optical amplifiers (SOA) are a fundamental building block for many photonic systems. However, their power inefficiency has been setting back operational cost reduction, and the resulting thermal losses constrain…
Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems…
We demonstrate a simple method to obtain accurate optical waveforms with a GHz-level programmable modulation bandwidth and Watt-level output power for wideband optical control of free atoms and molecules. Arbitrary amplitude and phase…
One of the prominent platforms for quantum technologies, cold atoms require reliable laser systems. We present the design, implementation, and characterization of a simple, compact, and economical laser system at 780 nm, entirely based on…
High-coherence light sources with an ultra-narrow linewidth are of considerable research interests in numerous fields, such as laser interferometer gravitational-wave observatory, laser radio, etc. Herein, commencing from the in-depth…
Laser cooling of atoms usually necessitates several laser frequencies. Alkaline atoms, for example, are cooled by two lasers with a frequency difference in the Gigahertz range. This gap cannot be closed with simple shifting techniques.…
We present the development of a high power fibre laser system to investigate its suitability for use in a transverse electron beam profile monitor i.e. a laserwire. A system capable of producing individual pulses up to $165.8 \pm 0.4 \mu$J…
Fiber lasers are widely used in various fields owing to their high efficiency, flexible transmission and excellent beam quality. In applications such as industrial manufacturing and defense systems, a higher output power is always desired.…
Light source is indispensable component in on-chip system. Compared with hybrid or heterogeneous integrated laser, monolithically integrated laser is more suitable for high density photonic integrated circuit (PIC) since the capability of…
A novel and simple model is proposed for the measurement of the linewidth enhancement factor (LEF) {\alpha} of multiwavelengths semiconductor laser. It is based on the suppression characteristics of an arbitrary mode while other modes are…
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and…
Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…
We demonstrate a narrow-linewidth 780 nm laser system with up to 40 W power and a frequency modulation bandwidth of 230 MHz. Efficient overlap on nonlinear optical elements combines two pairs of phase-locked frequency components into a…
In the optical (380-700 nm) region, a simulation study was conducted to assess the low-signal gain, power conversion efficiency (PCE), and optical output power of a praseodymium-doped fiber optic amplifier (PDFA). The PDFA performance was…
We demonstrate a low noise, high-gain, resonant optical amplifier that combines injection locking with feed-forward cancellation of residual phase noise. The wavelength-agnostic architecture uses a commercial semiconductor diode laser as a…
We present the first observation of Self-Amplified Spontaneous Emission (SASE) in a free-electron laser (FEL) in the Vacuum Ultraviolet regime at 109 nm wavelength (11 eV). The observed free-electron laser gain (approx. 3000) and the…