Related papers: Coulomb Blockade in low mobility nanometer size Si…
We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length,…
We study the conductance spectrum of graphene quantum dots, both single and multiple cases. The single electron tunneling phenomenon is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low…
We consider a tunnel junction formed between a fixed electrode and an oscillating one. Accumulation of the charge on the junction capacitor induces a force on the nano-mechanical oscillator. The junction is voltage biased and connected in…
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the…
We analyzed the effects of a spin voltage as well as a conventionally applied voltage in a QD system with a different number of quantum states in the dot region in presence of Coulombic interaction between the quantum dot and two leads. We…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…
Coulomb blockade (CB) in a quantum dot (QD) with one anomalously broad level is considered. In this case many consecutive pronounced CB peaks correspond to occupation of one and the same broad level. Between the peaks the electron jumps…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…
We study Coulomb blockade (CB) oscillations in the thermodynamics of a metallic grain which is connected to a lead by a tunneling contact with a large conductance $g_0$ in a wide temperature range, $E_Cg_0^4 e^{-g_0/2}<T<E_C$, where $E_C$…
One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
It was shown that tunneling current flowing through a system with Coulomb correlations leads to charge redistribution between the different localized states. Simple model consisting of two electron levels have been analyzed by means of…
Nonlinear transport through a quantum dot is studied in the limit of weak and strong intra-dot Coulomb interaction. For the latter regime the nonequilibrium self-consistent mean field equations for energies and spectral weights of…
We study resonant tunneling through an interacting quantum dot coupled to normal metallic and superconducting leads. We show that large Coulomb interaction gives rise to novel effects in Andreev transport. Adopting an exact relation for the…
The influence of Coulomb interaction on the electron transport through molecular wires is studied in the regime of incoherent tunneling. In the limit of strong Coulomb repulsion, the current for spinless electrons is determined. It is shown…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Amplitude of the Coulomb blockade oscillations is calculated for a single-mode Josephson junction with arbitrary electron transparency $D$. It is shown that the Coulomb blockade is suppressed in ballistic junctions with $D\to 1$. The…