Related papers: Proximity effect in planar Superconductor/Semicond…
Using a microscopic approach, we revisit the problem of superconducting critical temperature change in the presence of twin boundaries. We show that both critical temperature enhancement and suppression can come purely from geometric…
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase…
In electronic cooling with superconducting tunnel junctions, the cooling power is counterbalanced by the interaction with phonons and by the heat flow from the overheated leads. We study aluminium-based coolers that are equipped with a…
We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor - insulator - superconductor - insulator - superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on…
The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their…
We demonstrate, both theoretically and experimentally, that thin dirty superconductor-normal metal bilayer with resistivity of normal metal $\rho_N$ much smaller than normal-state resistivity of superconductor $\rho_S$ has unique…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related…
We investigate transition to the superconducting state in the ultrathin titanium nitride films on approach to superconductor-insulator transition. Building on the complete account of quantum contributions to conductivity, we demonstrate…
We have studied the superconducting behavior of 100 nm Titanium Nitride (TiN) thin film in a perpendicular magnetic field. We found a zero field transition temperature of 4.6 K and a slope in the H-T plane of -0.745 T/K. At 4.2 K, we have…
We report on transport and tunneling measurements performed on ultra-thin Pb/Ag (strong coupled superconductor/normal metal) multilayers evaporated by quench condensation. The critical temperature and energy gap of the heterostructures…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…
600V/20A 4H-SiC Schottky barrier diodes (SBD) were fabricated to investigate the effect of key processing steps, especially before and after a formation of Schottky contact, on the electrical performances of SBD and on a long-term…
We have produced Sn/Si core-shell cluster assemblies by a plasma-gas-condensation cluster beam deposition apparatus. For the sample with Si content = 12 at.%, the temperature dependence of electrical resistivity exhibits a metallic behavior…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
We theoretically study the properties of thermal conductance in a normal-insulator-superconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential…
We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90 - 510 GHz (3 - 17 cm-1). The experiments were perfomed on a 18 nm thick TiN film with a critical temperature of 3.4 K. Measurements…
Some of the highest-transition-temperature superconductors across various materials classes exhibit linear-in-temperature `strange metal' or `Planckian' electrical resistivities in their normal state. It is thus believed by many that this…
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the…