Related papers: Binding energy of localized biexcitons in quantum …
A chart for the quantum mechanics of a particle of mass $m$ in a one-dimensional potential well of width $w$ and depth $V_0$ is derived. The chart is obtained by normalizing energy and potential through multiplication by ${8 m}{w^2} / h^2$,…
The complex valence band structure of bulk cuprous oxide necessitates going beyond the parabolic approximation to precisely estimate exciton binding energies. The same is true for excitons in cuprous oxide quantum wells, for which many…
Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DH's) in carbon-doped (100) GaAs/AlxGa1-xAs heterostructures. The measured m_b shows strong dependences on both the 2DH…
In this work we investigate electron-impurity binding energy in GaN/HfO$_2$ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between…
The properties of an exciton in a type II quantum dot are studied under the influence of a perpendicular applied magnetic field. The dot is modelled by a quantum disk with radius $R$, thickness $d$ and the electron is confined in the disk,…
We present results of numerical calculations of electronic states of an exciton and a trion in a CdTe quantum well at magnetic fields up to 150T. The exciton state and the trion states were computed using a variational procedure. We…
We propose a double channel mechanism for the formation of charged excitons (trions); they are formed through bi- and tri-molecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum…
Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning…
A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps…
A bosonic analogue of the fractional quantum Hall eff ect occurs in rapidly rotating trapped Bose gases: There is a transition from uncorrelated Hartree states to strongly correlated states such as the Laughlin wave function. This physics…
Two component Bose gas in a double well potential with repulsive interactions may undergo a phase separation transition if the inter-species interactions outweigh the intra-species ones. We analyze the transition in the strong interaction…
Interlayer excitons are bound states of electrons and holes confined in separate two-dimensional layers. Due to their repulsive dipolar interaction, interlayer excitons can form a correlated liquid. If another electron-hole bilayer is…
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not…
We present a study of the effect of an electric field on the binding energy of a shallow hydrogenic impurity in GaAs/Ga_{1-x}Al_{x}As quantum well wires. The wire is considered to be of length L and radius R and the electric field F is…
The Stochastic Variational Method (SVM) is used to show that the effective mass model correctly estimates the binding energies of excitons and trions, but fails to predict the experimental binding energy of the biexciton. Using…
Quantum well of AlGaAs/GaAs is very important to study transport properties of electrons due to its wider application in electronic devices. Hence, the double well of AlGaAs/GaAs with triple barrier is taken to study transmission…
Consider Hill's operator Q = -D^2 + q(x) in which the potential q(x) is an almost surely continuous and rotation invariant Gaussian process on the circle of perimeter one. Viewing the classical Riccati map as a change of measure, we…
The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated…
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…
The results of an experimental study of the energy spectrum of the valence band in a HgTe quantum well of width d<6.3 nm with normal spectrum in the presence of a strong spin-orbit splitting are reported. The analysis of the temperature,…