In this work we investigate electron-impurity binding energy in GaN/HfO2 quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schr\"odinger equation and the results shows how the magnitude of the electron-impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO2 with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.
@article{arxiv.1410.4213,
title = {Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells},
author = {T. A. S. Pereira and A. A. Sousa and M. H. Degani and G. A. Farias},
journal= {arXiv preprint arXiv:1410.4213},
year = {2014}
}